Simulation of Semiconductor Processes and Devices 2004 Book

	Advanced transport models for sub-micrometer devices	1
	NEMO-1D : the first NGF-based TCAD tool	9
	The density-gradient correction as a disguised pilot wave of de Broglie	13
	Full band and approximated solutions of the Schrodinger equation in silicon inversion layers	17
	A hybrid 3D quantum mechanical simulation of FinFETs and nanowire devices	21
	On the calculation of quasi-bound states and their impact on direct tunneling in CMOS devices	25
	Quantum mechanical simulation in DG MOSFETs based on a tight binding Green's function formalism	29
	Modeling B uphill diffusion in the presence of Ge	33
	Ab-initio calculations to predict stress effects on boron solubility in silicon	37
	Boron diffusion in strained and strain-relaxed SiGe	41
	Modeling dopant diffusion in SiGe and SiGeC layers	45
	Continuum modeling of indium to predict SSR profiles	49
	Theoretical analysis of stress and surface orientation effects on inversion carrier mobility	53
	CMOS circuit performance enhancement by surface orientation optimization	57
	Modeling of stress induced layout effect on electrical characteristics of advanced MOSFETs	61
	Hole mobility enhancement modeling and scaling study for high performance strained Ge buried channel PMOSFETs	65
	Three-dimensional characterization and modelling of stress distribution in high-density DRAM memory cells	69
	Strain optimization to reduce gate leakage current in MOS transistors with silicon oxynitride gate dielectrics by use of first-principles calculations	73
	Simulation study of simple CMOS-compatible Thin-SOI vertical bipolar transistors on thin BOX with an inversion collector	77
	Current collapse associated with surface states in GaN-based HEMT's. Theoretical/experimental investigations	81
	Implications of gate misalignment for ultra-narrow multi-gate devices	85
	Source-side injection modeling by means of the spherical-harmonics expansion of the BTE	89
	Investigation of a novel tunneling transistor by MEDICI simulation	93
	Optimization of BAW resonator performance using combined simulation techniques	97
	Simulation of GaN-based light-emitting devices	101
	On the validity of the relaxation time approximation for macroscopic transport models	109
	A local mobility model for ultra-thin DGSOI nMOSFETs	113
	On the relationship between carrier mobility and velocity in sub-50 nm MOSFETs via calibrated Monte Carlo simulation	117
	A method for determining the screening length of the coulombic scattering in non-degenerate and degenerate semiconductors	121
	3D simulation of process effects limiting FinFET performance and scalability	125
	Full three-dimensional analysis of a non-volatile memory cell	129
	Three-dimensional simulation of orientation-dependent wet chemical etching	133
	Modeling CVD effects in atomic layer deposition on the feature scale	137
	Defect and carrier dynamics in nanotubes under electronic excitations : time-dependent density functional approaches	141
	Three-dimensional analysis of Schottky barrier carbon nanotube field effect transistors	149
	Numerical performance analysis of carbon nanotube (CNT) embedded MOSFETs	153
	Parameter extraction and validation of an electronic and optical model for organic light-emitting devices	157
	Adaptive surface triangulations for 3D process simulation	161
	Anisotropic laplace refinement for three-dimensional oxidation simulation	165
	Monte Carlo simulation of ion implantation in silicon-germanium alloys	169
	Comprehensive understanding of carrier mobility in MOSFETs with oxynitrides and ultrathin gate oxides	173
	Physics and modeling of radiation effects in advanced CMOS technology nodes	181
	Very high performance, sub-20 nm, strained Si and Si[subscript x]Ge[subscript 1-x], hetero-structure, center channel (CC) NMOS and PMOS DGFETs	191
	Scalability of FinFETs and unstrained-Si/strained-Si FDSOI-MOSFETs	195
	Device performance in conventional and strained Si n-MOSFETs with high-[Kappa] gate stacks	199
	Understanding the role of strain in Si-Ge devices	203
	Electro-thermal simulations of strained-Si MOSFETs under ESD conditions	207
	Simulation of the cross-coupling among snap back devices under transient high current stress	211
	Simulation of the failure mechanism of power DMOS transistors under avalanche stress	215
	An accurate and comprehensive soft error simulator NISES II	219
	Impact of scattering on random dopant induced current fluctuations in decanano MOSFETs	223
	Analysis of random doping and oxide thickness induced fluctuations in nanoscale semiconductor devices through poisson-Schrodinger computations	227
	Stable simulation of impurity fluctuation for contact resistance and Schottky diodes	231
	Impact of the floating body effect on noise in SOI devices investigated by hydrodynamic simulation	235
	Examination of spatial frequency dependence of line edge roughness on MOS device characteristics	239
	Simulation of lithography-caused gate length and interconnect linewidth variational impact on circuit performance in nanoscale semiconductor manufacturing	243
	Optimization of recessed and elevated silicide source/drain contact structure using physical compact resistance modeling and simulation in ultra-thin body SOI MOSFETs	247
	A new backscattering model for nano-MOSFET compact modeling	251
	Fully-depleted SOI-MOSFET model for circuit simulation and its application to 1/f noise analysis	255
	Modeling of carrier transport dynamics at GHz-frequencies for RF circuit-simulation
	SPICE-compatible macro model for split-gate compact NVM cell with various gap sizes	263
	SET accurate compact model for SET-MOSFET hybrid circuit simulation	267
	2D quantum mechanical (QM) charge model and its application to ballistic transport of sub-50 nm bulk silicon MOSFETs	271
	Effective bohm quantum potential for device simulators based on drift-diffusion and energy transport	275
	Single ion and multi ion MOSFETs simulation with density gradient model	279
	Modeling and simulation of combined thermionic emission-tunneling current through interfacial isolation layer	283
	Experiments on minority carrier diffusion in silicon : contribution of excitons	287
	Accurate temperature drift model of MOSFETs mobility for analog circuits	291
	Accurate modeling of lattice site-dependent ionization level of impurities in [alpha]-SiC devices	295
	Strain scaling for ultra thin silicon NMOS devices	299
	CMOS scaling analysis based on ITRS roadmap by three-dimensional mixed-mode device simulation	303
	Comparison of nanoscale metal-oxide-semiconductor field effect transistors	307
	Numerical analysis for the structure dependence on the subthreshold slope of floating channel type SGT(FC-SGT) flash memory	311
	A Monte-Carlo method for distribution of standby currents and its application to DRAM retention time	315
	Optimal contact placement in partially depleted SOI with application to raised source-drain structures	319
	Simulation of microstructure formation during thin film deposition	323
	Effect of stress on pattern-dependent oxidation of silicon nanostructures	327
	The evolution of the resistance and current density during electromigration	331
	3-D physically-based electromigration simulation in copper-low-K interconnect	335
	3D feature-scale simulation of sputter etching with coupling to equipment simulation	339
	Automatic optimization algorithm for a direct 2D and 3D mesh generation from the layout information	343
	Genetic algorithm for optimization and calibration in process simulation	347
	Performance evaluation of linear solvers employed for semiconductor device simulation	351
	An analysis of the effect of surrounding gate structure on soft error immunity	355
	Analytical modeling of Ge and Si double-gated (DG) NFETs and the effect of process induced variations (PIV) on device performance	359
	Proposal of physics-based compact model for nanoscale MOSFETs including the transition from drift-diffusion to ballistic transport	363
	A new methodology for efficient and reliable large-signal analysis of RF power devices	367
	Small-signal modeling of RF CMOS	374