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Preface | ||
Acknowledgements | ||
1 | Introduction | 1 |
1.1 | The Concept of IC Reliability | 1 |
1.2 | Design-for-Reliability | 4 |
1.3 | VLSI Reliability Problems | 6 |
1.4 | Gradual Degradation versus Catastrophic Failures | 7 |
1.5 | Hot-Carrier Effects | 9 |
2 | Oxide Degradation Mechanisms in MOS Transistors | 15 |
2.2 | MOS Transistor : A Qualitative View | 16 |
2.3 | The Nature of Gate Oxide Damage in MOSFETs | 19 |
2.4 | Injection of Hot Carriers into Gate Oxide | 21 |
2.5 | Oxide Traps and Charge Trapping | 31 |
2.6 | Interface Trap Generation | 34 |
2.7 | Bias Dependence of Degradation Mechanisms | 36 |
2.8 | Degradation under Dynamic Operating Conditions | 39 |
2.9 | Effects of Hot-Carrier Damage on Device Characteristics | 43 |
2.10 | Hot-Carrier Induced Degradation of pMOS Transistors | 47 |
3 | Modeling of Degradation Mechanisms | 55 |
3.2 | Quasi-Elastic Scattering Current Model | 56 |
3.3 | Charge (Electron) Trapping Model | 64 |
3.4 | Impact Ionization Current Model | 66 |
3.5 | Interface Trap Generation Model | 67 |
3.6 | Trap Generation under Dynamic Operating Conditions | 71 |
4 | Modeling of Damaged MOSFETs | 77 |
4.2 | Representation of Hot-Carrier Induced Oxide Damage | 78 |
4.3 | Two-Dimensional Modeling of Damaged MOSFETs | 80 |
4.4 | Empirical One-Dimensional Modeling | 83 |
4.5 | An Analytical Damaged MOSFET Model | 89 |
4.6 | Consideration of Channel Velocity Limitations | 101 |
4.7 | Pseudo Two-Dimensional Modeling of Damaged MOSFETs | 103 |
4.8 | Table-Based Modeling Approaches | 104 |
5 | Transistor-Level Simulation for Circuit Reliability | 111 |
5.2 | Review of Circuit Reliability Simulation Tools | 112 |
5.3 | Circuit Reliability Simulation Using iSMILE : A Case Study | 119 |
5.4 | Circuit Simulation Examples | 124 |
5.5 | Evaluation of the Simulation Algorithm | 133 |
5.6 | Identification of Critical Devices | 136 |
6 | Fast Timing Simulation for Circuit Reliability | 143 |
6.2 | ILLIADS-R : A Fast Timing and Reliability Simulator | 144 |
6.3 | Fast Dynamic Reliability Simulation | 148 |
6.4 | Circuit Simulation Examples with ILLIADS-R | 155 |
6.5 | iDSIM2 : Hierarchical Circuit Reliability Simulation | 159 |
7 | Macromodeling of Hot-Carrier Induced Degradation in MOS Circuits | 165 |
7.2 | Macromodel Development : Starting Assumptions | 166 |
7.3 | Degradation Macromodel for CMOS Inverters | 167 |
7.4 | Degradation Macromodel for nMOS Pass Gates | 173 |
7.5 | Application of the Macromodel to Inverter Chain Circuits | 179 |
7.6 | Application of the Macromodel to CMOS Logic Circuits | 186 |
8 | Circuit Design for Reliability | 191 |
8.2 | Device-Level Measures | 193 |
8.3 | Circuit-Level Measures | 199 |
8.4 | Rule-Based Diagnosis of Circuit Reliability | 203 |
Index | 209 |
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Add Hot-Carrier Reliability Of Mos Vlsi Circuits, This volume addresses the issues related to hot-carrier reliability of MOS VLSI circuits, ranging from device physics to circuit design guidelines. It presents a unified view of the physical mechanisms involved in hot-carrier induced device degradation, t, Hot-Carrier Reliability Of Mos Vlsi Circuits to your collection on WonderClub |