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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, Vol. 2 Book

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, Vol. 2
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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, Vol. 2, , The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, Vol. 2
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  • The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, Vol. 2
  • Written by author B.E. Deal
  • Published by Springer-Verlag New York, LLC, September 1993
Buy Digital  USD$335.04

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IThermal Oxidation Mechanisms and Modeling
Introduction1
Silicon Oxides and Oxidation3
Use of [superscript 18]O Labelling to Study Growth Mechanisms in Dry Oxidation of Silicon7
Strain Dependent Diffusion During Dry Thermal Oxidation of Crystalline Si15
Oxidation of Silicon in Oxygen: Measurement of Film Thickness and Kinetics23
Modeling Process-Dependent Thermal Silicon Dioxide (SiO[subscript 2]) Films on Silicon31
IINovel Oxidation Methods and Characterization
Introduction43
New Approach to Chemically Enhanced Oxidation - A Review45
Kinetics of Oxidation of Silicon by Electron Cyclotron Resonance Plasmas55
Mechanisms of Oxidation Rate Enhancement in Negative-Point Oxygen Corona Discharge Processing of SiO[subscript 2] Films on Si63
High Pressure Oxidation for Low Temperature Passivation of Si[subscript 1-x]Ge[subscript x] Alloys71
A New Ellipsometry Technique for Interface Analysis: Application to Si-SiO[subscript 2]81
Observation of Thin SiO[subscript 2] Films Using IR-RAS91
Deconvolution of Thickness-Averaged Structural and Optical Properties of Thermally Grown and RPECVD SiO[subscript 2] Films99
TEM Investigations of the Oxidation Kinetics of Amorphous Silicon Films109
IIIDeposition and Properties of SiO[subscript 2]
Introduction117
Thermal and X-Ray Production of Point Defects in Vitreous SiO[subscript 2]119
A Review of the EPR Spectroscopy of the Point Defects in [alpha]-Quartz: The Decade 1982-1992131
Formation of Si/SiO[subscript 2] Heterostructures by Low-Temperature, Plasma-Assisted Oxidation and Deposition Processes145
Comparison and SiO[subscript 2] Thin Film Properties Deposited by Distributed Electron Cyclotron Resonance Plasma Using Two Different Oxidant Gases: N[subscript 2]O or O[subscript 2]157
Low Temperature Synthesis and Characterization of Silicon Dioxide Films165
IVChemical Properties of Si Surfaces Related to Oxidation and Oxide Deposition
Introduction175
Native Oxide Growth and Hydrogen Bonding Features on Chemically Cleaned Silicon Surfaces177
Understanding the Surface Chemical and Structural Implications of HF Solution Cleaning of Silicon187
Pre-Gate Oxide Si Surface Control199
Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH[subscript 4]F Treated Si(111) Surfaces207
Silicon Surface Analysis and Very Thin Silicon Oxide Characterization after HF/Ethanol Preoxidation Silicon Cleaning215
Effects of Metallic Impurities Upon Thin Gate Oxide Integrity and Related Bulk Properties in CZ Si223
VChemical, Structural, and Microroughness Effects at the Si-SiO[subscript 2] Interface
Introduction235
Local Bonding at SiO[subscript 2]/Si Interfaces237
High-Resolution Transmission Electron Microscope Image of the SiO[subscript 2]/(001)Si Interface247
Dependence of Surface Microroughness on Types of Silicon Substrates257
The Effect of Surface Roughness on Gate Oxide Leakage Currents267
A Double Sacrificial Oxide Process for Smoother 150 [actual symbol not reproducible] SiO[subscript 2] Gate Oxide Interfaces273
Effect of Solidification Induced Defects in CZ-Silicon Upon Thin Gate Oxide Integrity279
Effects of D-Defects in CZ Silicon Upon Thin Gate Oxide Integrity289
Oxidation Induced Changes in the Si Surface Microroughness299
VINovel Structures, Processes, and Phenomena
Introduction307
Properties of Simox and Related Systems309
Reoxidized Nitrided Oxide Gate Dielectrics for Advanced CMOS319
Interface Properties and Device Reliability of High Quality PECVD Oxide for MOS Applications329
Charge Trapping in an Oxide-Nitride-Oxide Gate Dielectric337
Interface Trap Density Reduction and Oxide Profiling for MOS Capacitors with Fluorinated Gate Oxide Dielectrics345
Physics of Extreme Quantum Confinement Exemplified by Si/SiO[subscript 2] System353
The Integrity of Very Thin Silicon Films Deposited on SiO[subscript 2]357
Researches of SiO[subscript 2] on InP and GaAs MOS Structures363
VIIDefects and Hot-Carrier Induced Damage in Si-SiO[subscript 2] Systems
Introduction371
Generation of Random Telegraph Noise by Single Si/SiO[subscript 2] Interfacial Defects373
Single Electron Transfer from the Channel of a Sub-[mu]m MOSFET to an Individual Interface Trap383
Defect Structure and Generation Mechanisms at the Si/SiO[subscript 2] Interface393
The Influence of Crystal Orientation and Processing Conditions on the Energy Distribution of Traps at the Si-SiO[subscript 2] Interface403
Charge Trapping and Defect Generation in Thermal Oxide Layers411
Optically Induced Nitrogen Dangling Bonds in Amorphous Hydrogenated Silicon Nitride Thin Films421
VIIIRadiation and Hydrogen Induced Effects in Silicon-Silicon Dioxide Systems
Introduction427
Impact Ionization and Degradation in Silicon Dioxide Films on Silicon429
Hot-Electron Dynamics in Thin Silicon Dioxide Films Studied by Photon-Induced Electron Transmission439
Constant Current


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