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I | Thermal Oxidation Mechanisms and Modeling | |
Introduction | 1 | |
Silicon Oxides and Oxidation | 3 | |
Use of [superscript 18]O Labelling to Study Growth Mechanisms in Dry Oxidation of Silicon | 7 | |
Strain Dependent Diffusion During Dry Thermal Oxidation of Crystalline Si | 15 | |
Oxidation of Silicon in Oxygen: Measurement of Film Thickness and Kinetics | 23 | |
Modeling Process-Dependent Thermal Silicon Dioxide (SiO[subscript 2]) Films on Silicon | 31 | |
II | Novel Oxidation Methods and Characterization | |
Introduction | 43 | |
New Approach to Chemically Enhanced Oxidation - A Review | 45 | |
Kinetics of Oxidation of Silicon by Electron Cyclotron Resonance Plasmas | 55 | |
Mechanisms of Oxidation Rate Enhancement in Negative-Point Oxygen Corona Discharge Processing of SiO[subscript 2] Films on Si | 63 | |
High Pressure Oxidation for Low Temperature Passivation of Si[subscript 1-x]Ge[subscript x] Alloys | 71 | |
A New Ellipsometry Technique for Interface Analysis: Application to Si-SiO[subscript 2] | 81 | |
Observation of Thin SiO[subscript 2] Films Using IR-RAS | 91 | |
Deconvolution of Thickness-Averaged Structural and Optical Properties of Thermally Grown and RPECVD SiO[subscript 2] Films | 99 | |
TEM Investigations of the Oxidation Kinetics of Amorphous Silicon Films | 109 | |
III | Deposition and Properties of SiO[subscript 2] | |
Introduction | 117 | |
Thermal and X-Ray Production of Point Defects in Vitreous SiO[subscript 2] | 119 | |
A Review of the EPR Spectroscopy of the Point Defects in [alpha]-Quartz: The Decade 1982-1992 | 131 | |
Formation of Si/SiO[subscript 2] Heterostructures by Low-Temperature, Plasma-Assisted Oxidation and Deposition Processes | 145 | |
Comparison and SiO[subscript 2] Thin Film Properties Deposited by Distributed Electron Cyclotron Resonance Plasma Using Two Different Oxidant Gases: N[subscript 2]O or O[subscript 2] | 157 | |
Low Temperature Synthesis and Characterization of Silicon Dioxide Films | 165 | |
IV | Chemical Properties of Si Surfaces Related to Oxidation and Oxide Deposition | |
Introduction | 175 | |
Native Oxide Growth and Hydrogen Bonding Features on Chemically Cleaned Silicon Surfaces | 177 | |
Understanding the Surface Chemical and Structural Implications of HF Solution Cleaning of Silicon | 187 | |
Pre-Gate Oxide Si Surface Control | 199 | |
Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH[subscript 4]F Treated Si(111) Surfaces | 207 | |
Silicon Surface Analysis and Very Thin Silicon Oxide Characterization after HF/Ethanol Preoxidation Silicon Cleaning | 215 | |
Effects of Metallic Impurities Upon Thin Gate Oxide Integrity and Related Bulk Properties in CZ Si | 223 | |
V | Chemical, Structural, and Microroughness Effects at the Si-SiO[subscript 2] Interface | |
Introduction | 235 | |
Local Bonding at SiO[subscript 2]/Si Interfaces | 237 | |
High-Resolution Transmission Electron Microscope Image of the SiO[subscript 2]/(001)Si Interface | 247 | |
Dependence of Surface Microroughness on Types of Silicon Substrates | 257 | |
The Effect of Surface Roughness on Gate Oxide Leakage Currents | 267 | |
A Double Sacrificial Oxide Process for Smoother 150 [actual symbol not reproducible] SiO[subscript 2] Gate Oxide Interfaces | 273 | |
Effect of Solidification Induced Defects in CZ-Silicon Upon Thin Gate Oxide Integrity | 279 | |
Effects of D-Defects in CZ Silicon Upon Thin Gate Oxide Integrity | 289 | |
Oxidation Induced Changes in the Si Surface Microroughness | 299 | |
VI | Novel Structures, Processes, and Phenomena | |
Introduction | 307 | |
Properties of Simox and Related Systems | 309 | |
Reoxidized Nitrided Oxide Gate Dielectrics for Advanced CMOS | 319 | |
Interface Properties and Device Reliability of High Quality PECVD Oxide for MOS Applications | 329 | |
Charge Trapping in an Oxide-Nitride-Oxide Gate Dielectric | 337 | |
Interface Trap Density Reduction and Oxide Profiling for MOS Capacitors with Fluorinated Gate Oxide Dielectrics | 345 | |
Physics of Extreme Quantum Confinement Exemplified by Si/SiO[subscript 2] System | 353 | |
The Integrity of Very Thin Silicon Films Deposited on SiO[subscript 2] | 357 | |
Researches of SiO[subscript 2] on InP and GaAs MOS Structures | 363 | |
VII | Defects and Hot-Carrier Induced Damage in Si-SiO[subscript 2] Systems | |
Introduction | 371 | |
Generation of Random Telegraph Noise by Single Si/SiO[subscript 2] Interfacial Defects | 373 | |
Single Electron Transfer from the Channel of a Sub-[mu]m MOSFET to an Individual Interface Trap | 383 | |
Defect Structure and Generation Mechanisms at the Si/SiO[subscript 2] Interface | 393 | |
The Influence of Crystal Orientation and Processing Conditions on the Energy Distribution of Traps at the Si-SiO[subscript 2] Interface | 403 | |
Charge Trapping and Defect Generation in Thermal Oxide Layers | 411 | |
Optically Induced Nitrogen Dangling Bonds in Amorphous Hydrogenated Silicon Nitride Thin Films | 421 | |
VIII | Radiation and Hydrogen Induced Effects in Silicon-Silicon Dioxide Systems | |
Introduction | 427 | |
Impact Ionization and Degradation in Silicon Dioxide Films on Silicon | 429 | |
Hot-Electron Dynamics in Thin Silicon Dioxide Films Studied by Photon-Induced Electron Transmission | 439 | |
Constant Current |
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