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Ch. 1 Introduction 1
Ch. 2 Terrestrial Neutron Spectrometry and Dosimetry 11
Ch. 3 Irradiation Testing in the Terrestrial Field 93
Ch. 4 Neutron Irradiation Test Facilities 139
Ch. 5 Review and Discussion of Experimental Data 175
Ch. 6 Monte Carlo Simulation Methods 219
Ch. 7 Simulation Results and Their Implications 237
Ch. 8 International Standardization of the Neutron Test Method 253
Ch. 9 Summary and Challenges 259
A Appendices 269
A1 Radiological Protection Quantities 269
A2 Approximation Functions for Total Cross Section 273
A3 Approximation Functions for Non-elastic Cross Section 278
A4 Comparison of GEM Calculation Results for Inverse Reaction Cross Section with Literature Data 283
A5 LET Approximation Results in Substrate Used for Silicon Devices 286
A6 Coefficients for LET Calculation for Substrate Used in Silicon Devices 289
References 291
Terms and Definitions 317
Index 335
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Add Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices, Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semicon, Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices to the inventory that you are selling on WonderClubX
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Add Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices, Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semicon, Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices to your collection on WonderClub |