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Book Categories |
| 1 | Technology-Oriented CAD | 1 |
| 1.2 | Process and Device CAD | 5 |
| 1.3 | Process Simulation Techniques | 11 |
| 1.4 | Interfaces in Process and Device CAD | 16 |
| 1.5 | CMOS Technology | 21 |
| 2 | Introduction to SUPREM | 37 |
| 2.2 | Ion Implantation | 43 |
| 2.3 | Oxidation | 53 |
| 2.4 | Impurity Diffusion | 65 |
| 3 | Device CAD | 87 |
| 3.2 | Semiconductor Device Analysis | 90 |
| 3.3 | Field-Effect Structures | 98 |
| 3.4 | Bipolar Junction Structures | 109 |
| 4 | PN Junctions | 131 |
| 4.2 | Carrier Densities: Equilibrium Case | 132 |
| 4.3 | Non-Equilibrium | 139 |
| 4.4 | Carrier Transport and Conservation | 144 |
| 4.5 | The pn Junction - Equilibrium Conditions | 147 |
| 4.6 | The pn Junction - Non-equilibrium | 155 |
| 4.7 | SEDAN Analysis | 166 |
| 5 | MOS Structures | 197 |
| 5.2 | The MOS Capacitor | 198 |
| 5.3 | Basic MOSFET I-V Characteristics | 208 |
| 5.4 | Threshold Voltage in Nonuniform Substrate | 217 |
| 5.5 | MOS Device Design by Simulation | 224 |
| 6 | Bipolar Transistors | 243 |
| 6.2 | Lateral pnp Transistor Operation | 245 |
| 6.3 | Transport Current Analysis | 252 |
| 6.4 | Generalized Charge Storage Model | 260 |
| 6.5 | Transistor Equivalent Circuits | 267 |
| 6.6 | Second Order Effects | 274 |
| 6.7 | Transit Time and Cutoff Frequency | 282 |
| 6.8 | Application of Simulation Tools | 288 |
| 7 | BiCMOS Technology | 295 |
| 7.2 | Triple-Diffused BiCMOS | 296 |
| 7.3 | Buried-Epitaxial Layer BiCMOS | 302 |
| A. Numerical Analysis | 317 | |
| A.2 | Discretization | 319 |
| A.3 | Newton Method and Convergence Issues | 329 |
| A.4 | Device Parameter Computation | 332 |
| B. BiCMOS Technology Overview | 337 | |
| B.2 | System Needs of the Technology | 337 |
| B.3 | Overview of the Stanford BiCMOS Process | 340 |
| B.4 | Development of BiCMOS Process | 341 |
| B.5 | Electrical Characteristics | 350 |
| C. Templates for PISCES Simulation | 355 | |
| C.1 | 1D BJT | 356 |
| C.2 | MOS Capacitors | 365 |
| Index | 370 |
| Price | Condition | Delivery | Seller | Action |
| $177.21 | Digital |
| WonderClub |
Errika Walker
reviewed Technology Cad - Computer Simulation Of Ic Processes And Devices on May 27, 2017
Technology Cad - Computer Simulation Of Ic Processes And Devices
I am not sure who the audience for this book is. The beginning chapters are obviously geared toward beginners, but the later chapters are quite complex - a remarkable range for a book under 400 pages. The book does a very poor job clearly explaining advanced topics.
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Add Technology Cad - Computer Simulation Of Ic Processes And Devices, The rapid evolution and explosive growth of integrated circuit technology have impacted society more than any other technological development of the 20th century. Integrated circuits (ICs) are used universally and the expanding use of IC technology requir, Technology Cad - Computer Simulation Of Ic Processes And Devices to the inventory that you are selling on WonderClubX
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Add Technology Cad - Computer Simulation Of Ic Processes And Devices, The rapid evolution and explosive growth of integrated circuit technology have impacted society more than any other technological development of the 20th century. Integrated circuits (ICs) are used universally and the expanding use of IC technology requir, Technology Cad - Computer Simulation Of Ic Processes And Devices to your collection on WonderClub |