Semiconductors and Electronic Devices Book

	Preface to the third edition
	From the Preface to the first edition
	Acknowledgements
1	Semiconductors and their preparation for engineering use	1
2	Crystal structure and valence model of a pure and doped semiconductor	6
3	Mobility and electrical conductivity	21
4	Excess carriers, lifetime, diffusion and transport phenomena	31
5	Measuring some basic electrical parameters of bulk semiconductors	40
6	Energy bands in solids	56
7	Homogeneous semiconductor in thermodynamic equilibrium	86
8	The PN junction, heterojunctions and metal - semiconductor contacts	96
9	The PN diode I: static characteristics	125
10	The PN diode II: dynamic behaviour and computer model	152
11	Field effect transistors (FETs)	169
12	MOS transistors in integrated circuits	196
13	Amplification and switching: transistor models and equivalent circuits	215
14	The bipolar transistor I: structure, operation, large-signal model and maximum ratings	233
15	The bipolar transistor II: models, integration and noise	269
16	More integrable devices of the Si and GaAs families	301
17	Semiconductors and integrated circuit technology	312
18	Introduction to integrated circuits	341
19	Power semiconductor devices	357
20	Microwave semiconductor devices	380
21	Semiconductors in optoelectronics	397
22	Devices of the future	425
	References and further reading	440
	Appendix 1 Two-port representations	443
	Appendix 2 Thermionic emission, cathodes and vacuum tubes	445
	Appendix 3 Physical constants and important parameters of semiconductor materials	456
	Appendix 4 Silicon processing data	458
	Index	461