Amorphous and Nanocrystalline Silicon Science and Technology: 2005: Symposium Held March 28-... Book

	Urbach edge, disorder, and absorption on-set in a-Si:H	3
	Novel in situ and real-time optical probes to detect (surface) defect states of a-Si:H	19
	Correlation between powder in the plasma and stability of high rate deposited a-Si:H	31
	The role of SiH[subscript 3] diffusion in determining the surface smoothness of plasma-deposited amorphous Si thin films : an atomic-scale analysis	37
	Development of deposition phase diagrams for thin film Si:H and Si[subscript 1-x]Ge[subscript x]:H using real time spectroscopic ellipsometry	43
	Electronic properties of improved amorphous silicon-germanium alloys deposited by a low temperature hot wire chemical vapor deposition process	49
	AFM morphology study of Si[subscript 1-y]Ge[subscript y]:H films deposited by LF PE CVD from silane-germane with different dilution	55
	Improved optical loss characteristics of PECVD silicon oxynitride films using low frequency plasma	61
	Growth chemistry of nanocrystalline Si:H films	69
	Nanocrystalline Si films and devices produced using chemical annealing with helium	75
	Nanocrystalline-Si thin film deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150[degrees]C	81
	Influence of pressure and plasma potential on high growth rate microcrystalline silicon grown by VHF PECVD	87
	High density plasma processing of microcrystalline Si thin films	93
	Dependence of microcrystalline silicon growth on ion flux at the substrate surface in a saddle field PECVD	99
	'Seed layers' for the preparation of hydrogenated microcrystalline silicon with defined structural properties on glass	105
	Crystallographic study of the initial growth region of [mu]c-Si with different preferential orientations	111
	Structural and electronic properties of hydrogenated nanocrystalline silicon films made with hydrogen dilution profiling technique	117
	Structure of microcrystalline solar cell materials : what can we learn from electron microscopy?	123
	Microcrystalline and nanocrystalline silicon : simulation of material properties	133
	Doping dependence of chlorine incorporation in SiCl[subscript 4]-based microcrystalline silicon films	139
	Low substrate temperature deposition of crystalline SiC using HWCVD	145
	Nanocrystalline germanium and germanium carbide films and devices	151
	Real-time spectroscopic ellipsometry as an in situ probe of the growth dynamics of amorphous and epitaxial crystal silicon for photovoltaic applications	159
	A phase diagram of low temperature epitaxial silicon grown by hot-wire chemical vapor deposition for photovoltaic devices	171
	Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition	177
	Growth of "new form" of polycrystalline silicon thin films synthesized by hot wire chemical vapor deposition	183
	Hot-mesh chemical vapor deposition for 3C-SiC growth on Si and SiO[subscript 2]	189
	Polycrystalline GeC thin films deposited using a unique hollow cathode sputtering technique	195
	Micro-crystalline silicon-germanium thin films prepared by the multi-target RF sputtering system	201
	Poly-crystalline Ge thin films prepared by RF sputtering method for thermo photo voltaic application	207
	Ge growth on nanostructured silicon surfaces	213
	GaAs growth on micro and nano patterned Ge/Si[subscript 1-x]Ge[subscript x] and Si surfaces	219
	Real time monitoring of the crystallization of hydrogenated amorphous silicon	227
	Solid phase crystallization of hot-wire CVD amorphous silicon films
	Suppression of nucleation during the aluminum-induced layer exchange process	239
	Correlation of in and ex situ stress to microstructures during Al-induced crystallization of PECVD amorphous silicon	245
	TCAD modeling of metal induced lateral crystallization of amorphous silicon	251
	Excimer laser crystallized HWCVD thin silicon films : electron field emission	257
	Formation of a miscibility gap in laser-crystallized poly-SiGe thin films	263
	Ultra-shallow junction formation by a non-melting process : double-pulsed green laser annealing	269
	Application of field-enhanced rapid thermal annealing to activation of doped polycrystalline Si thin films	275
	Effects of post annealing and material stability on undoped and n[superscript +] nc-Si:H films deposited at 75[degrees]C using 13.56 MHz PECVD	281
	Annealing characteristics of Al-doped hydrogenated microcrystalline cubic silicon carbide films	287
	Initial stage hydrogen movement and IR absorption proportionality constants in hot-wire deposited SiN[subscript 1.2]:H during high-temperature annealing	293
	Electrodeposition of fluorescent Si nanomaterial from acidic sodium silicate solutions	301
	High-yield synthesis of luminescent silicon quantum dots in a continuous flow nonthermal plasma reactor	307
	Experimental study of silane plasma nanoparticle formation in amorphous silicon thin films	313
	Effects of N[subscript 2]O fluence on the PECVD-grown Si-rich SiO[subscript x] with buried Si nanocrystals	319
	CO[subscript 2] laser annealing synthesis of silicon nanocrystals buried in Si-rich SiO[subscript 2]	325
	Charging effect of a nc-Si in a SiO[subscript 2] layer observed by scanning probe microscopy	331
	Conductance fluctuations in amorphous silicon nanoparticles	337
	Study of the oxidation of polycrystalline SiGe : formation of Ge nanocrystals and their related luminescence	343
	Formation of antimony 1D-nanostructures on Si (5 5 12) surface	351
	Fabrication of one-dimensional silicon nanowires based on proximity effects of electron-beam lithography	357
	Fabrication of silicon nanowire network in aluminum thin films	363
	Wiring and introduction of single silicon nanocrystals into multi-walled carbon nanotubes	369
	Metal induced growth of poly-Si solar cells and silicide nanowires by use of multiple catalyst layers	375
	New light trapping in thin film solar cells using textured photonic crystals	381
	Advances in amorphous silicon integrated photonics science and technology	387
	Fabrication of nano-crystalline porous silicon on Si substrates by a plasma enhanced hydrogenation technique	393
	Application of spectroscopic ellipsometry and infrared spectroscopy for the real-time control and characterization of a-Si:H growth in a-Si:H/c-Si heterojunction solar cells	401
	High-performance amorphous silicon emitter for crystalline silicon solar cells	413
	Bifacial silicon heterojunction solar cell with deposited back surface field	419
	Electron field emission from SiC/Si heterostructures formed by carbon implantation into silicon and etching of the top silicon layer	425
	Application of SC-simul for numerical modeling of the opto-electronic properties of heterojunction diodes	431
	Characterization of amorphous silicon by secondary ion mass spectrometry	439
	Observation of a hydrogen doublet site in high defect density as-grown a-Si:H by [superscript 1]H NMR	445
	The nature of native and light induced defect states in i-layers of high quality a-Si:H solar cells derived from dark forward-bias current-voltage characteristics	451
	The creation and annealing kinetics of fast light induced defect states created by 1 sun illumination in a-Si:H	457
	Light-intensity dependence of the Staebler-Wronski effect in a-Si:H with various densities of defects	463
	Effect of Fermi level position in intrinsic a-Si:H on the evolution of defect states under light exposure	469
	Light-soaking effects on the open-circuit voltage of a-Si:H solar cells	475
	The effects of hydrogen profiling and of light-induced degradation on the electronic properties of hydrogenated nanocrystalline silicon	481
	Comparison of the effect of light soaking in porous silicon and a-Si:H	487
	Optical properties of amorphous silicon-yttrium films	495