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| Pt. I | Clusters of Interstitial Atoms in Metastable Configurations | |
| Ch. 1 | Structure of rod-like and (113)-defects | |
| Ch. 2 | Formation and growth of (113)-defects by in situ electron irradiation in a high-voltage electron microscope | |
| Ch. 3 | Shrinkage of rod-like and (113)-defects during electron irradiation in the high-voltage electron microscope | |
| Pt. II | Clusters of Interstitial Atoms as Dislocation-Type Defects | |
| Ch. 4 | Interaction of point defects with dislocations during electron irradiation in the high-voltage electron microscope | |
| Ch. 5 | Formation of dislocation loops after ion implantation of silicon crystals | |
| Conclusions | ||
| Index of Photographs | ||
| Abbreviations | ||
| References |
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| $144.21 | Digital |
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Add Clusters of Interstitial Atoms in Silicon and Germanium, The problem of the formation of interstitial atom clusters in Si and Ge crystals is treated in order to present useful results for the understanding of problems which may arise after implatation, thermal gettering, and thermal treatment of Si and Ge wafer, Clusters of Interstitial Atoms in Silicon and Germanium to the inventory that you are selling on WonderClubX
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