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Preface | ||
Electromigration Early Failure Distribution in Submicron Interconnects | 3 | |
Direct Measurement of Nucleation Times and Growth Rates of Electromigration Induced Voids | 15 | |
Electromigration in Aluminum Damascene Lines | 27 | |
Reliability Considerations for Copper Metallizations in ULSI Circuits | 39 | |
Electromigration Modeling for Design Rule Development in Microelectronic Interconnects | 51 | |
Modeling and Experimental Characterization of Electromigration in Interconnect Trees | 62 | |
Diffusion-Induced Stresses | 77 | |
In Situ Study of Interconnect Failures by Electromigration Inside a Scanning Electron Microscope | 89 | |
Model Studies of Electromigration Using Indented Single-Crystal Aluminum Lines | 100 | |
Local Strain Measurements during Electromigration | 112 | |
Alloying Effects in Electromigration: What Controls the Electromigration Drift? | 126 | |
Multiprobe Resistance Monitoring of Blech Pattern during Electromigration Testing | 138 | |
3-D Finite Element Simulator for Migration Effects due to Various Driving Forces in Interconnect Lines | 150 | |
In Situ Electromigration Damage in Al Interconnect Lines in the SEM and the Influence of Grain Orientation | 162 | |
Effect of Grain Boundary/Interface Network on Cavity Growth under Interacted Migration Induced by Stress and Electric Current | 168 | |
Stress-Induced and Electromigration Voiding in Nitride Passivated Al Interconnects | 174 | |
In-Situ Studies of Electromigration Voiding in Passivated Copper Interconnects | 180 | |
Molecular Dynamic Simulation of Grain Boundary Diffusivities and Vacancy Behavior in Al | 186 | |
Nucleation, Growth, Interduffusion, and Adhesion of Metal Films on Polymers | 201 | |
Thermoclastic Analysis of Thin Lines on Substrates | 217 | |
Mechanical Strains and Stresses in Aluminum and Copper Interconnect Lines for 0.18 [mu]m Logic Technologies | 229 | |
Anelastic Contributions to the Behavior of Freestanding Al Thin Films | 240 | |
Stress in Electrochemically Deposited Copper | 249 | |
Microstructural Analysis of Al Interconnects in Microprocessor Devices Using EFTEM | 255 | |
Quantitative Texture Analysis of Cu Damascene Interconnects | 261 | |
Stress Relaxation and Creep in Freestanding Thin Al Films Studied Using a Bulge Tester | 265 | |
Grain Growth and Twinning in Copper Thin Films for ULSI Circuits | 271 | |
Stress and Plasticity in Passivated Interconnect Lines | 277 | |
Stress and Plasticity in Cu Thin Films | 283 | |
Analysis of Local Strain in Aluminum Interconnects by Convergent Beam Electron Diffraction | 289 | |
A Finite Element Study of Thermal Stress in Copper Interconnect | 298 | |
Thermal Stresses in Cu and Damascene Submicron Line Structures | 304 | |
Subject Index | 315 | |
Author Index | 317 |
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Add Stress Induced Phenomena in Metallization : 5th International Workshop, Stuttgart, Germany, June 23-25, 1999, The performance of computer chips has been improved by reducing the size of all components. With this continuing trend towards miniaturization in microelectronic devices, mechanical stresses have become a major reliability concern for the so-called back-e, Stress Induced Phenomena in Metallization : 5th International Workshop, Stuttgart, Germany, June 23-25, 1999 to the inventory that you are selling on WonderClubX
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Add Stress Induced Phenomena in Metallization : 5th International Workshop, Stuttgart, Germany, June 23-25, 1999, The performance of computer chips has been improved by reducing the size of all components. With this continuing trend towards miniaturization in microelectronic devices, mechanical stresses have become a major reliability concern for the so-called back-e, Stress Induced Phenomena in Metallization : 5th International Workshop, Stuttgart, Germany, June 23-25, 1999 to your collection on WonderClub |