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Book Categories |
Preface | ||
Ch. 1 | Introduction | 1 |
Ch. 2 | Significant Physical Effects In Modern MOSFETs | 13 |
Ch. 3 | Threshold Voltage Model | 65 |
Ch. 4 | I-V Model | 105 |
Ch. 5 | Capacitance Model | 143 |
Ch. 6 | Substrate Current Model | 211 |
Ch. 7 | Noise Model | 219 |
Ch. 8 | Source/Drain Parasitics Model | 243 |
Ch. 9 | Temperature Dependence Model | 263 |
Ch. 10 | Non-quasi Static (NQS) Model | 281 |
Ch. 11 | BSIM3v3 Model Implementation | 303 |
Ch. 12 | Model Testing | 327 |
Ch. 13 | Model Parameter Extraction | 353 |
Ch. 14 | RF and Other Compact Model Applications | 375 |
App. A | BSIM3v3 Parameter Table | 409 |
App. B | BSIM3v3 Model Equations | 421 |
App. C | Enhancements and Changes in BSIM3v3.1 versus BSIM3v3.0 | 449 |
App. D | Enhancements and Changes in BSIM3v3.2 versus BSIM3v3.1 | 455 |
Index | 459 |
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Add Mosfet Modeling And Bsim3 User's Guide, Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for sta, Mosfet Modeling And Bsim3 User's Guide to the inventory that you are selling on WonderClubX
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Add Mosfet Modeling And Bsim3 User's Guide, Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for sta, Mosfet Modeling And Bsim3 User's Guide to your collection on WonderClub |