2000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications Book

	n- and p- type Si/SiGe Hetero FETs	1
	Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors	8
	Noise investigation of SiGe and Si nMOSFETs with gate oxide grown by low temperature plasma anodisation	14
	Variable Gain SiGe HBT Amplifier with Low Noise Figure	20
	Si/SiGe IC's with low cost in the 15-20 GHz range	26
	Design of nearly body-free Si/SiGe MODFETs	32
	Metal gate strained silicon MOSFETs for microwave integrated circuits	38
	The Ultrafast Photonics Collaboration	44
	Monolithic compound-cavity laser diodes modelocked at THz frequencies	46
	Effects of current-dependent and frequency dependent gain suppression on the nonlinear dynamics of semiconductor lasers	51
	A 28 GHz HPT/HBT monolithically integrated photoreceiver for hybrid fibre radio distribution systems	55
	Material and device issues of GaN-based HEMTs	61
	Suppression of instabilities in 4H-SiC Microwave MESFETs	67
	GaN/AlGaN HFETs Fabricated on a SiC Substrate	71
	The gate length dependent performance of AlGaN/GaN HFETs with silicon nitride passivation	76
	Very high volume production of GaAs MMICs	82
	Ultra-broadband nonlinear pHEMT modelling using TOPAS	85
	Low-noise device and circuit characterisation at cryogenic temperatures for high sensitivity microwave receivers	89
	Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates using an InP buffer layer	95
	Base-collector design optimisation of InGaP/GaAs DHBTs	99
	Design of a 50 Gbit/s InP/InGaAs HBT master-slave D-type flip-flop	105
	Predictive microwave device design by coupled electro-thermal simulation based on a fully physical thermal model	111
	Static thermal design of quasi monolithic integration technology	117
	Design and realisation of a novel balanced self-oscillating mixer topology	123
	Microwave characteristics of meander inductors fabricated using self-assembly	128
	Microwave switch using MEMS technology	134
	The design of a single frequency ice gauge using a microstrip patch antenna	140
	Electric field switching in a resonant tunneling diode electroabsorption modulator	146
	Analysis of the optical gain and rise time of a QW-structure optoelectronic integrated device	152
	Analysis of high frequency pass-band photodetection response at the rear contact in a multi-electrode SOA	158
	Efficient direct modulation of colliding pulse mode-locked lasers on semi-insulating substrate at 1.5 [mu]m	163
	Optical absorption coefficient determination and physical modelling of strained SiGe/Si photodetectors	167
	Rigourous analysis of photonic devices by using the finite element method	173
	Influence of O[subscript 2] on rectification properties of nickel phthalocyanine thin film devices	179
	A novel optical fibre based sensor for monitoring a high power microwave powered UV light source and its use in detection of a microwave electric field	185
	Circularly polarized active circulator smart skin antenna	190
	Evanescent mode power combiner in suspended stripline configuration	196
	First demonstration of InAlAs/InGaAs HEMTs using T-gates fabricated by a bi-layer of UVIII and PMMA resists	202
	Electrothermal modelling of microwave transistors and MMICs for optimised transient and steady-state performance	206
	CIA - A comprehensive CAD Tool for Analog, RF Microwave IC's	212
	Modelling and simulation of AlGAAs/GaAS HBT using the finite element method	218
	DVD OEIC and 1 Gbit/s Fiber Receiver in CMOS Technology	224
	Application of evolutionary computation techniques to nonlinear microwave circuit analysis	230
	Effect of impact ionisation in scaled pHEMts	236
	Measured an theoretical analysis on the optimisation of HBT circuits for optical demodulator designs	242
	Accurate approximate function for normalised diode characteristic	248
	Characterisation of the nonlinear device capacitance in frequency domain	253
	New method to determine the HBT capacitances using multibiases S-parameter measurements	259
	The Physical Properties-Based HBT Model for the SPICE Simulator	265
	Electrical stress characteristics in MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime	271
	Direct assessment of relaxation and defect propagation in different thin single Ge/Si and step-graded SiGe/Si buffer layers for RF and microwave applications	276