Amorphous and Nanocrystalline Silicon Science and Technology--2004: Symposium Held April 13-... Book

	Si wire light emission changes during Si/SiO[subscript x] interface formation	5
	Fabrication and characterization of a germanium quantum-dot transistor formed by selective oxidation of SiGe/Si-on-insulator	11
	Understanding the structure of Si nanoclusters in a/nc-Si:H films using spherical aberration-corrected transmission electron microscopy	17
	Correlation between surface charge accumulation and excitation intensity dependent red-shifted micro-photoluminescence of Si-implanted quartz with embedded Si nanocrystals	23
	About the luminescence mechanisms of composite a-Si:nc-Si system obtained by ion-beam amorphization in the wide dose region	29
	Buffer-layer effect on mixed-phase cells studied by micro-Raman and photoluminescence spectroscopy	35
	Metastability in undoped microcrystalline silicon thin films deposited by HWCVD	41
	The influence of light-soaking and atmospheric adsorption on microcrystalline silicon films studied by coplanar transient photoconductivity	47
	Identification of possible bonding sites for post deposition oxygen absorption in microcrystalline silicon	53
	Correlation of hydrogenated nanocrystalline silicon microstructure and solar cell performance	59
	H evolution from nano-crystalline silicon - comparison of simulation and experiment	65
	Hydrogen in silicon and germanium : impurity activation and dopant passivation	73
	Influence of the distribution of tail states in a-Si:H on the field dependence of carrier drift mobilities	85
	Femtosecond far-infrared studies of photoconductivity in a-Si:H and a-SiGe:H	97
	Extension of the constant photocurrent method to determine densities of occupied and unoccupied localized states	103
	Hole drift-mobility measurements and multiple-trapping in microcrystalline silicon	109
	Electronic properties of RF glow discharge intrinsic microcrystalline silicon near the amorphous silicon phase boundary	115
	Transient and modulated photoconductivity in microcrystalline silicon	121
	Interpretation of transient photocurrents in coplanar and sandwich PIN microcrystalline silicon structures	127
	Electric-field dependence of photocarrier properties in the steady-state photocarrier grating experiment	133
	Metastable defects in a-Si:H and a-Ge:H: the role of hydrogen	141
	Evolution of D[superscript 0] and Non-D[superscript 0] light induced defect states in a-Si:H materials and their respective contribution to carrier recombination	153
	Tritium induced defects in amorphous silicon	159
	Study of 3-MeV electron irradiation damage in amorphous silicon with TRMC	165
	Reversible ordering of a-Si[subscript 1-x]Ge[subscript x] by the combined effect of light and temperature	171
	Absence of enhanced stability in deuterated amorphous silicon thin film transistors	177
	Are the current models helpful to understanding Staebler-Wronski degradation?	183
	The role of charged gap states in light-induced degradation of single-junction a-Si:H solar cells	189
	Surface processes during growth of hydrogenated amorphous silicon	199
	In situ observation of silicon epitaxy breakdown with real-time spectroscopic ellipsometry	209
	Comparison of phase diagrams for vhf and rf plasma-enhanced chemical vapor deposition of Si:H films	215
	Phase diagram and microstructure of microcrystalline and amorphous silicon : a numerical growth simulation	221
	A phase diagram for morphology and properties of low temperature deposited polycrystalline silicon grown by hot-wire chemical vapor deposition	227
	Roughness evolution of high-rate deposited a-SiN[subscript x]:H films studied by atomic force microscopy and real time spectroscopic ellipsometry	233
	Materials and interface optimization of heterojunction silicon (HIT) solar cells using in situ real-time spectroscopic ellipsometry	239
	Enhanced surface diffusion in low-temperature a-Si:H processing	245
	Effects of facet growth and nucleation on microcrystalline silicon by numerical model	251
	New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams	257
	Excimer-laser growth of Si large-grain arrays	265
	Location control of crystal grains in excimer laser crystallization of silicon thin films for single-grain TFTs	277
	Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd:YAG pulse laser with an ultra sonic oscillator	283
	Silicon-hydrogen bonds in boron and phosphorous doped polycrystalline silicon thin films	289
	Modeling of aluminum induced lateral crystallization of hydrogenated amorphous silicon	297
	Aluminum-induced crystallization of PECVD amorphous silicon	303
	Initial interaction of crystalline Al/amorphous Si bilayer during annealing	309
	The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon	315
	In situ aluminum-induced crystallization of Si thin-films on glass substrates above the eutectic temperature using HW-CVD	321
	Solar cells on foreign substrates using poly-Si thin films by metal induced growth	327
	Metal induced crystallization of SiGe at 370[degrees]C for monolithically integrated MEMS applications	333
	CW argon-ion laser initiated aluminum induced crystallization of amorphous silicon thin films	339
	Reel-to-reel cassette cluster tool system for thin film transistor and four terminal solar cell fabrication	347
	Hydrogen injection in ETP plasma jet for fast-deposition of high-quality a-Si:H	359
	Optical and electronic characterization of a-SiGe:H thin films prepared by a novel hollow cathode deposition technique	365
	Low-temperature silicon films deposition by pulsed cathodic arc process for microsystem technologies	371
	Growth and characterization of poly-SiGe prepared by reactive thermal CVD	377
	External rf substrate biasing during a-Si:H film growth using the expanding thermal plasma technique	383
	Structural and electronic properties of SiCl[subscript 4]-based microcrystalline silicon films	389
	Growth of hydrogenated microcrystalline silicon ([mu]c-Si:H) films by HWCVD using a graphite catalyzer	395
	Influence of catalyzer area and design on the growth of intrinsic hot-wire CVD thin-film silicon for photovoltaic applications	401
	Deposition of optimal a-Si:H and a-SiGe:H by HWCVD using the same filament temperature and substrate temperature	407
	An investigation of silicon oxide thin film by atomic layer deposition	413
	High-quality hydrogen-diluted a-SiN[subscript x]:H films deposited by hot-wire chemical vapor deposition	419
	Protocrystalline silicon at high rate from undiluted silane	425
	Suppression of Staebler-Wronski effect induced electrical crosstalk in a-Si:H-based image sensors	435
	Vertically integrated amorphous silicon particle sensors
	Amorphous silicon backplane with polymer MEMS structures for electrophoretic displays	447
	MEMS microresonators based on nanocrystalline silicon	453
	Increase of temperature and crystallinity during electrical switching in microcrystalline silicon	459
	Threshold voltage and field for metal filament formation in hydrogenated amorphous silicon	465
	Development of a porous silicon product for small molecule mass spectrometry	471
	Amorphous Si[subscript 1-y]Ge[subscript y]:H, F films obtained by low frequency PECVD for uncooled microbolometers	477
	High current density in [mu]c-Si PECVD diodes for low temperature applications	483
	Evaluation of an alternative technique for the fabrication of direct detector x-ray imagers : spray pyrolysis of lead iodide and mercury iodide	489
	Two terminal large area single and double p-i-n devices for image and color recognition	495