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Fabrication & Performance of Submicron Gate Length Gallium Arsenide-Channel Mosfets Using Indium Aluminum Phosphide Oxide as the Gate Dielectric. Book

Fabrication & Performance of Submicron Gate Length Gallium Arsenide-Channel Mosfets Using Indium Aluminum Phosphide Oxide as the Gate Dielectric.
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Fabrication & Performance of Submicron Gate Length Gallium Arsenide-Channel Mosfets Using Indium Aluminum Phosphide Oxide as the Gate Dielectric., , Fabrication and Performance of Submicron Gate Length Gallium Arsenide-Channel Mosfets Using Indium Aluminum Phosphide Oxide as the Gate Dielectric.
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  • Fabrication and Performance of Submicron Gate Length Gallium Arsenide-Channel Mosfets Using Indium Aluminum Phosphide Oxide as the Gate Dielectric.
  • Written by author Jing Zhang
  • Published by , May 2012
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Fabrication & Performance of Submicron Gate Length Gallium Arsenide-Channel Mosfets Using Indium Aluminum Phosphide Oxide as the Gate Dielectric., , Fabrication and Performance of Submicron Gate Length Gallium Arsenide-Channel Mosfets Using Indium Aluminum Phosphide Oxide as the Gate Dielectric.

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Fabrication & Performance of Submicron Gate Length Gallium Arsenide-Channel Mosfets Using Indium Aluminum Phosphide Oxide as the Gate Dielectric., , Fabrication and Performance of Submicron Gate Length Gallium Arsenide-Channel Mosfets Using Indium Aluminum Phosphide Oxide as the Gate Dielectric.

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Fabrication & Performance of Submicron Gate Length Gallium Arsenide-Channel Mosfets Using Indium Aluminum Phosphide Oxide as the Gate Dielectric., , Fabrication and Performance of Submicron Gate Length Gallium Arsenide-Channel Mosfets Using Indium Aluminum Phosphide Oxide as the Gate Dielectric.

Fabrication & Performance of Submicron Gate Length Gallium Arsenide-Channel Mosfets Using Indium Aluminum Phosphide Oxide as the Gate Dielectric.

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