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Analysis and Design of Integrated Circuits Book

Analysis and Design of Integrated Circuits
Analysis and Design of Integrated Circuits, This edition combines the consideration of metal-oxide-semiconductors (MOS) and bipolar circuits into a unified treatment that also includes MOS-bipolar connections made possible by BiCMOS technology. Contains extensive use of SPICE, especially as an inte, Analysis and Design of Integrated Circuits has a rating of 4 stars
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Analysis and Design of Integrated Circuits, This edition combines the consideration of metal-oxide-semiconductors (MOS) and bipolar circuits into a unified treatment that also includes MOS-bipolar connections made possible by BiCMOS technology. Contains extensive use of SPICE, especially as an inte, Analysis and Design of Integrated Circuits
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  • Analysis and Design of Integrated Circuits
  • Written by author Paul R. Gray
  • Published by Wiley, John & Sons, Incorporated, August 1992
  • This edition combines the consideration of metal-oxide-semiconductors (MOS) and bipolar circuits into a unified treatment that also includes MOS-bipolar connections made possible by BiCMOS technology. Contains extensive use of SPICE, especially as an inte
  • This edition combines the consideration of metal-oxide-semiconductors (MOS) and bipolar circuits into a unified treatment that also includes MOS-bipolar connections made possible by BiCMOS technology. Contains extensive use of SPICE, especially as an inte
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Ch. 1Models for Integrated-Circuit Active Devices1
1.1Introduction1
1.2Depletion Region of a pn Junction1
1.3Large-Signal Behavior of Bipolar Transistors10
1.4Small-Signal Models of Bipolar Transistors30
1.5Large-Signal Behavior of Junction Field-Effect Transistors46
1.6Small-Signal Model of the JFET55
1.7Large-Signal Behavior of Metal-Oxide-Semiconductor Field-Effect Transistors59
1.8Small-Signal Model of the MOS Transistor in Saturation67
1.9Short-Channel Effects in FETs72
1.10Subthreshold Conduction in MOSFETs76
1.11Substrate Current Flow in MOSFETs79
Appendix A1.1 Summary of Active-Device Parameters81
Ch. 2BiPolar, MOS, and BiCMOS Integrated-Circuit Technology89
2.1Introduction89
2.2Basic Processes in Integrated-Circuit Fabrication90
2.3High-Voltage Bipolar Integrated-Circuit Fabrication102
2.4Advanced Bipolar Integrated-Circuit Fabrication105
2.5Active Devices in Bipolar Analog Integrated Circuits111
2.6Passive Components in Bipolar Integrated Circuits133
2.7Modifications to the Basic Bipolar Process143
2.8MOS Integrated-Circuit Fabrication149
2.9Active Devices in MOS Integrated Circuits154
2.10Passive Components in MOS Technology167
2.11BiCMOS Technology172
2.12Economics of Integrated-Circuit Fabrication173
2.13Packaging Considerations for Integrated Circuits180
Appendix A2.1 SPICE Model-Parameter Files185
Ch. 3Single-Transistor and Two-Transistor Amplifiers193
3.1Device Model Selection for Approximate Analysis of Analog Circuits195
3.2Basic Single-Transistor Amplifier Stages196
3.3Two-Transistor Amplifier Stages219
3.4Emitter-Coupled Pairs227
3.5Source-Coupled FET Pairs244
3.6Device Mismatch Effects in Differential Amplifiers250
Appendix A3.1 Elementary Statistics and the Gaussian Distribution260
Ch. 4Transistor Current Sources and Active Loads269
4.1Introduction269
4.2Current Sources270
4.3Current Sources as Active Loads287
Appendix A4.1 Matching Considerations in Transistor Current Sources317
Appendix A4.2 Supply-Independent Biasing322
Appendix A4.3 Temperature-Independent Biasing333
Appendix A4.4 Low-Current Biasing346
Ch. 5Output Stages355
5.1Introduction355
5.2The Emitter Follower as an Output Stage355
5.3The Common-Emitter Output Stage370
5.4The Common-Base Output Stage377
5.5Class B (Push-Pull) Output Stage378
Ch. 6Operational Amplifiers409
6.1Applications of Operational Amplifiers410
6.2Deviations from Ideality in Real Operational Amplifiers420
6.3Analysis of Monolithic Operational Amplifiers425
6.4Design Considerations in Monolithic Operational Amplifiers445
6.5MOS Operational Amplifiers460
Appendix A6.1 Calculation of the Input Offset Voltage and Current of the 741466
Appendix A6.2 Input Offset Voltage of MOS Op Amps471
Ch. 7Frequency Response of Integrated Circuits479
7.1Introduction479
7.2Single-Stage Amplifier Frequency Response479
7.3Multistage Amplifier Frequency Response500
7.4Analysis of the Frequency Response of the 741 Op Amp519
7.5Relation Between Frequency Response and Time Response524
Ch. 8Feedback535
8.1Ideal Feedback Equation535
8.2Gain Sensitivity537
8.3Effect of Negative Feedback on Distortion538
8.4Feedback Configurations540
8.5Practical Configurations and the Effect of Loading547
8.6Single-Stage Feedback577
8.7The Voltage Regulator as a Feedback Circuit584
Ch. 9Frequency Response and Stability of Feedback Amplifiers597
9.1Introduction597
9.2Relation Between Gain and Bandwidth in Feedback Amplifiers597
9.3Instability and the Nyquist Criterion599
9.4Compensation607
9.5Root-Locus Techniques623
9.6Slew Rate642
Ch. 10Nonlinear Analog Circuits


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Analysis and Design of Integrated Circuits, This edition combines the consideration of metal-oxide-semiconductors (MOS) and bipolar circuits into a unified treatment that also includes MOS-bipolar connections made possible by BiCMOS technology. Contains extensive use of SPICE, especially as an inte, Analysis and Design of Integrated Circuits

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Analysis and Design of Integrated Circuits, This edition combines the consideration of metal-oxide-semiconductors (MOS) and bipolar circuits into a unified treatment that also includes MOS-bipolar connections made possible by BiCMOS technology. Contains extensive use of SPICE, especially as an inte, Analysis and Design of Integrated Circuits

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Analysis and Design of Integrated Circuits, This edition combines the consideration of metal-oxide-semiconductors (MOS) and bipolar circuits into a unified treatment that also includes MOS-bipolar connections made possible by BiCMOS technology. Contains extensive use of SPICE, especially as an inte, Analysis and Design of Integrated Circuits

Analysis and Design of Integrated Circuits

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